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 DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3900
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3900-ZP PACKAGE TO-263 (MP-25ZP)
FEATURES
* Super low on-state resistance RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 m MAX. (VGS = 4.5 V, ID = 41 A) * Low C iss: C iss = 3500 pF TYP. * Built-in gate protection diode (TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
60 20 82 246 104 1.5 150 -55 to +150 141 37.5 141
V V A A W W C C mJ A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Energy
Note2 Note3 Note3
EAS IAR EAR
Repetitive Avalanche Current Repetitive Avalanche Energy
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V, L = 100 H 3. RG = 25 , Tch(peak) 150C
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D17175EJ1V0DS00 (1st edition) Date Published May 2004 NS CP(K) Printed in Japan
2004
2SK3900
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 41 A VGS = 10 V, ID = 41 A VGS = 4.5 V, ID = 41 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 30 V, ID = 41 A VGS = 10 V RG = 0
MIN.
TYP.
MAX. 10 10
UNIT
A A
V S
1.5 28.1
2.0 56 6.3 7.4 3500 660 240 18 11 62 5.5
2.5
Drain to Source On-state Resistance
8.0 10
m m pF pF pF ns ns ns ns nC nC nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 48 V VGS = 10 V ID = 82 A IF = 82 A, VGS = 0 V IF = 82 A, VGS = 0 V di/dt = 100 A/s
65.5 11.5 16.5 0.95 41 61 1.5
V ns nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D17175EJ1V0DS
2SK3900
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
120
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
150
PT - Total Power Dissipation - W
100 80 60 40 20 0 0 25 50 75 100 125 150 175
125 100 75 50 25 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C
TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA
1000
RDS(on) Limited (at VGS = 10 V) ID(pulse) = 246 A 100 s 1 ms ID(DC) = 82 A
ID - Drain Current - A
100
10
Power Dissipation Limited
10 ms
1
TC = 25C Single pulse
0.1 0.1 1 10 100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W
1000
Single pulse
100 Rth(ch-A) = 83.3C/W 10 Rth(ch-C) = 1.2C/W 1
0.1
0.01 100
1m
10 m
100 m 1 PW - Pulse Width - s
10
100
1000
Data Sheet D17175EJ1V0DS
3
2SK3900
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
300
FORWARD TRANSFER CHARACTERISTICS
1000
ID - Drain Current - A
ID - Drain Current - A
250 VGS = 10 V 200 150 100 50 0 0 1 2 3 Pulsed 4 5 4.5 V
100
Tch = -55C 25C 10 75C 150C 1
0.1 0.01 0.001 0 1 2 3 4 VDS = 10 V Pulsed 5 6
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
100
4
VGS(off) - Gate Cut-off Voltage - V
3.5 3 2.5 2 1.5 1 0.5 0 -75 -25 25 75
| yfs | - Forward Transfer Admittance - S
VDS = 10 V ID = 1 mA
Tch = -55C 25C 75C 150C 10
1 VDS = 10 V Pulsed 0.1 1 10 100
0.1
125
175
Tch - Channel Temperature - C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m
24 20 16 12 8 4 0 1
Pulsed
24 20 16 12 8 4 0 0 4 8 12
ID = 41 A Pulsed
VGS = 4.5 V 10 V
10
100
1000
16
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D17175EJ1V0DS
2SK3900
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m
20 16 12 VGS = 4.5 V 8 4 0 -75 -25 25 75 125 175 10 V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz C iss
10000
1000
C oss
100
C rss
ID = 41 A Pulsed
10 0.1 1 10 100
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - C
SWITCHING CHARACTERISTICS VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VDD = 30 V VGS = 10 V RG = 0 td(off) td(on) tr tf
50 40 30 20 10 0
VDD = 48 V 30 V 12 V
ID = 82 A 10 8 VGS 6 4
100
10
VDS
2 0
1 0.1 1 10 100
ID - Drain Current - A
0
10
20
30
40
50
60
70
80
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
1000 100 VGS = 10 V 10 1 0.1 0.01 0 0.5 1 Pulsed 1.5 0V
trr - Reverse Recovery Time - ns IF - Diode Forward Current - A
1000
100
10 di/dt = 100 A/s VGS = 0 V 0.1 1 10 100
1
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
Data Sheet D17175EJ1V0DS
5
VGS - Gate to Source Voltage - V
1000
60
12
2SK3900
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
1000
SINGLE AVALANCHE ENERGY DERATING FACTOR
100
Energy Derating Factor - %
IAS - Single Avalanche Current - A
80 60 40 20 0
100 IAS = 37.5 A EAS = 141 mJ 10 VDD = 30 V RG = 25 VGS = 20 0 V Starting Tch = 25C 1 0.01 0.1 1 10
VDD = 30 V RG = 25 VGS = 20 0 V IAS 37.5 A
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - C L - Inductive Load - mH
6
Data Sheet D17175EJ1V0DS
2SK3900
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
10.00.3 No plating 7.88 MIN. 4
1.350.3
4.450.2 1.30.2
8.0 TYP.
9.150.3
15.250.5
0.025 to 0.25
0.5
0.6
0.750.2 2.54
0.2 8o
0 to
0.25
1
2
3
1.Gate 2.Drain 3.Source
2.5
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2.540.25
Data Sheet D17175EJ1V0DS
7


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